vft3060c www.vishay.com vishay general semiconductor revision: 28-oct-13 1 document number: 89256 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.38 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder bath temperature 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reverse battery protection. mechanical data case: ito-220ab ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 15 a v rrm 60 v i fsm 170 a v f at i f = 15 a 0.57 v t j max. 150 c package ito-220ab diode variation dual common cathode pin 1 pin 2 pin 3 tmbs ? ito-220ab 1 2 3 vft3060c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vft3060c unit maximum repetitive pe ak reverse voltage v rrm 60 v maximum average forward rectified current (fig. 1) per device i f(av) 30 a per diode 15 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 170 a voltage rate of change (rated v r ) dv/dt 10 000 v/s isolation voltage from termal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg -55 to +150 c
vft3060c www.vishay.com vishay general semiconductor revision: 28-oct-13 2 document number: 89256 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditi ons symbol typ. max. unit instantaneous forward voltage per diode i f = 5.0 a t a = 25 c v f (1) 0.47 - v i f = 7.5 a 0.51 - i f = 15 a 0.60 0.70 i f = 5.0 a t a = 125 c 0.38 - i f = 7.5 a 0.44 - i f = 15 a 0.57 0.65 reverse current per diode v r = 60 v t a = 25 c i r (2) -1.2 ma t a = 125 c 20 45 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vft3060c unit typical thermal resistance per diode r ? jc 6.0 c/w per device 4.8 ordering information (example) package preferred p/n unit weight (g) package code ba se quantity delivery mode ito-220ab vft3060c-m3/4w 1.76 4w 50/tube tube case temperature (c) average forward rectified current (a) 35 15 0 25 50 75 100 125 mounted on specific heatsink 10 30 25 20 0 150 5 0 2 4 6 14 018 average forward current (a) average power disspation (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 10 d = t p /t t p t 10 8 6 4 2 d = 1.0 8 12 16 14 12
vft3060c www.vishay.com vishay general semiconductor revision: 28-oct-13 3 document number: 89256 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical transient thermal impedance fig. 6 - typical j unction capacitance package outline dimensions in inches (millimeters) instantaneous forward voltage (v) 0.1 0.2 0.4 0.8 1.0 100 10 0.1 t a = 25 c 0.6 0.9 t a = 150 c t a = 125 c instantaneous forward current (a) 1 t a = 100 c 0.3 0.5 0.7 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 1 0.1 0.01 0.001 100 10 10 0.1 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) junction to case 1 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capaci tance (pf) 100 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38)
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